SILICON SUBSTRATE SUITABLE FOR USE WITH AN RF COMPONENT, AND AN RF COMPONENT FORMED ON SUCH A SILICON SUBSTRATE
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United States of America Patent
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Issued Date -
Jun 18, 2015
app pub date -
Dec 16, 2013
filing date -
Dec 16, 2013
priority date (Note) -
Abandoned
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Abstract
A silicon substrate is provided that may facilitate the formation of RF components more cheaply by using a silicon layer formed by the Czochralski process, and having a carrier life time killing layer deposited on the silicon layer.
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