PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

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United States of America Patent

APP PUB NO 20150170886A1
SERIAL NO

14447712

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.

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Patent Owner(s)

Patent OwnerAddress
HITACHI HIGH-TECHNOLOGIES CORPORATION24-14 NISHI-SHIMBASHI 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KANAZAWA, Shunsuke Tokyo, JP 4 35
MORIMOTO, Michikazu Tokyo, JP 24 248
OHGOSHI, Yasuo Tokyo, JP 27 498
YASUI, Naoki Tokyo, JP 52 1457

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