Dielectric K Value Tuning of HAH Stack for Improved TDDB Performance of Logic Decoupling Capacitor or Embedded DRAM
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Jun 18, 2015
app pub date -
Dec 18, 2013
filing date -
Dec 18, 2013
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Abstract
A hafnium oxide-aluminum oxide-hafnium oxide (HAH) based multilayer stack is used as the dielectric material in the formation of decoupling capacitors employed in microelectronic logic circuits. In some embodiments, the thickness of the aluminum oxide layer in the HAH multilayer stack varies between 0.1 nm and 1 nm. In some embodiments, the thickness of the two hafnium oxide layers varies between about 3.0 nm and 4.5 nm.
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