Method for Synthesis of Uniform Bi-Layer and Few-Layer Hexagonal Boron Nitride Dielectric Films
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United States of America Patent
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N/A
Issued Date -
Jun 18, 2015
app pub date -
Dec 17, 2014
filing date -
Dec 17, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for forming high quality hexagonal boron-nitride films with multiple layers that are substantially parallel to the substrate and with substantially uniform layer thickness. In one embodiment, a bi-layer of boron-nitride is formed on a substrate by reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at elevated temperature. In another embodiment, few-layer boron nitride films are formed by alternatingly reactive radio frequency magnetron sputtering of a boron target in high-purity Ar/N2 gas mixtures at room temperature and annealing at elevated temperature until a desired number of layers of high quality hexagonal boron nitride layers are formed on the substrate.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
BROOKHAVEN SCIENCE ASSOCIATES LLC | 40 BROOKHAVEN AVE - P O BOX 5000 BLDG 460 UPTON NY 11973-5000 |
International Classification(s)

- 2014 Application Filing Year
- C23C Class
- 2649 Applications Filed
- 2034 Patents Issued To-Date
- 76.79 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Sutter, Eli Anguelova | Westhampton Beach, US | 11 | 143 |
# of filed Patents : 11 Total Citations : 143 | |||
Sutter, Peter Werner | Westhampton Beach, US | 11 | 143 |
# of filed Patents : 11 Total Citations : 143 |
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Patent Citation Ranking
- 6 Citation Count
- C23C Class
- 13.95 % this patent is cited more than
- 10 Age
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11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Dec 18, 2026 |
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