PHOTOTRANSISTOR DEVICE
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United States of America Patent
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Issued Date -
Jun 11, 2015
app pub date -
Jun 18, 2013
filing date -
Jun 28, 2012
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Abstract
The present disclosure provides a heterostructure bipolar phototransistor configured for providing an output signal in response to an external impinging light beam. The heterostructure bipolar phototransistor comprises an emitter region and a collector region being doped so that they are of the same conductivity type; a base region interposed between the emitter region and the collector region, the base region being doped so that it is of the opposite conductivity type than the emitter region and the collector region; and an absorption region interposed between the base region and the collector region, wherein the absorption region comprises (or is formed of) a superlattice.
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