INTEGRATED CIRCUIT DEVICE WITH POWER GATING SWITCH IN BACK END OF LINE
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United States of America Patent
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Issued Date -
Jun 11, 2015
app pub date -
Dec 9, 2014
filing date -
Dec 10, 2013
priority date (Note) -
Abandoned
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Abstract
The disclosed technology generally relates to integrated circuit (IC), and more particularly to IC devices having one or more power gating switches and methods of fabricating the same. In one aspect, an IC device comprises a front end-of-the-line (FEOL) portion and a back end-of-the-line (BEOL) portion electrically connected to the FEOL portion. The BEOL portion comprises a plurality of metallization levels, wherein each metallization level comprises a plurality of metal lines extending in a lateral direction and a plurality of conductive vertical via structures. The IC device further comprises a power gating transistor formed in the BEOL portion and in direct electrical contact with at least one of the via structures or one of the metal lines.
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