FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION
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United States of America Patent
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Issued Date -
Jun 11, 2015
app pub date -
May 10, 2013
filing date -
May 11, 2012
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Abandoned
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Abstract
Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials.
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