METAL CHALCOGENIDE THIN FILM AND PREPARING METHOD THEREOF

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United States of America Patent

APP PUB NO 20150159265A1
SERIAL NO

14565885

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Abstract

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Provided herein is a metal chalcogenide thin film and a method for preparing the metal chalcogenide thin film, the method including forming a metal layer on a substrate; and forming a metal chalcogenide thin film by inserting the substrate into a chamber for low temperature vapor deposition, injecting a gas containing chalcogen atoms and an argon gas into the chamber, generating a plasma such that chalcogen atoms decomposed by the plasma chemically combine with metal atoms constituting the metal layer to form the metal chalcogenide thin film.

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Patent Owner(s)

Patent OwnerAddress
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY2066 SEOBU-RO JANGAN-GU SUWON-SI GYEONGGI-DO 16419 16419

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AHN, Chi Sung Suwon-si, KR 1 2
ARABALE, Girish Suwon-si, KR 2 2
KIM, Hyeongu Ansan-si, KR 1 2
KIM, Tae Sung Seoul, KR 126 954
LEE, Changgu Seoul, KR 7 52
LEE, Jinhwan Seongnam-si, KR 32 415

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