PRODUCTION METHOD FOR ZINC OXIDE HAVING IMPROVED POWER FACTOR DUE TO INCREASED GALLIUM DOPING
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 11, 2015
app pub date -
Oct 18, 2012
filing date -
Jun 5, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention relates to polycrystalline gallium-doped zinc oxide of which the power factor is improved due to increased gallium doping of same. Despite having a high carrier concentration, the Seebeck coefficient of Zn0.985Ga0.015O is higher than that of Zn0.990Ga0.010O, and this arises because of the effect of the density-of-states (DOS) effective mass. A steady increase in compression stress following gallium substitution occurs in the base portion of the conduction band DOS. The solubility limit of gallium in the zinc oxide matrix is increased because a low firing temperature accelerates chemical compression. Single phase n-type Zn0.985Ga0.015O exhibits a power factor of 12.5 μWcm−1K−2.
First Claim
Other Claims data not available
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 10.46 % this patent is cited more than
- 10 Age