SEMICONDUCTOR LAMINATE STRUCTURE AND SEMICONDUCTOR ELEMENT
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United States of America Patent
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Issued Date -
Jun 4, 2015
app pub date -
May 27, 2013
filing date -
Jun 1, 2012
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Abstract
Provided is a semiconductor laminate structure including a Ga2O3 substrate and a nitride semiconductor layer with high crystal quality on the Ga2O3 substrate, and also provided is a semiconductor element including this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure includes a β-Ga2O3 substrate including β-Ga2O3 crystal and a principal surface inclined from a (−201) surface to a [102] direction nd a nitride semiconductor layer including AlxGayInzN (0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) crystal formed by epitaxial crystal growth on the principal surface of the β-Ga2O3 substrate.
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