CHIP-STACKED IMAGE SENSOR HAVING HETEROGENEOUS JUNCTION STRUCTURE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Issued Date -
Jun 4, 2015
app pub date -
May 10, 2012
filing date -
May 7, 2012
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Abandoned
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Abstract
The present invention relates to a chip-stacked image sensor and to a method for manufacturing the same. More particularly, the present invention relates to a chip-stacked image sensor having a heterogeneous junction structure and to a method for manufacturing the same, in which a first semiconductor chip and a second semiconductor chip are manufactured using substrate materials suitable for the characteristics of sensors formed on each semiconductor substrate, and the semiconductor chips are stacked to form an image sensor. According to the chip-stacked image sensor having a heterogeneous junction structure and the method for manufacturing the same, the material for a first semiconductor substrate used in a first semiconductor chip and the material for a second semiconductor substrate used in a second semiconductor chip are different from each other, thus enabling characteristics of sensors formed on each semiconductor chip to be properly exhibited.
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