Reduction of Charging Induced Damage in Photolithography Wet Process
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United States of America Patent
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Issued Date -
Jun 4, 2015
app pub date -
Dec 3, 2013
filing date -
Dec 3, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An approach is developed to use an acidic rinse to reduce charge during the lithographic process, and thereby eliminate the crystalline damage and associated yield loss associated with the accumulated charge. The crystalline damage has been found to occur for certain thicknesses of dielectric layers, and such damage is irreparable. A sparge can be used to dissolve carbon dioxide in water to provide a weak acidic rinse.
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