METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
May 28, 2015
app pub date -
Nov 26, 2013
filing date -
Nov 26, 2013
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Abandoned
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Abstract
A method for manufacturing a semiconductor device may include: forming a metal layer structure over a semiconductor workpiece; forming a first layer over the metal layer structure, the first layer including a first material; forming at least one opening in the first layer and the metal layer structure; depositing a second layer to fill the at least one opening and at least partially cover a surface of the first layer facing away from the metal layer structure, the second layer including a second material that is different from the first material; removing the second layer from at least the surface of the first layer facing away from the metal layer structure; and removing the first layer.
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