SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT
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United States of America Patent
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N/A
Issued Date -
May 28, 2015
app pub date -
Apr 2, 2013
filing date -
May 23, 2012
priority date (Note) -
Published
status (Latency Note)
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Abstract
The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.
First Claim
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Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
KR | B1 | KR101379798 | May 23, 2012 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PATENT SPECIFICATION | Apparatus and method for growing monocrystalline silicon ingots | Apr 01, 2014 | |||
KR | B1 | KR101379799 | May 23, 2012 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PATENT SPECIFICATION | Apparatus and method for growing monocrystalline silicon ingots | Apr 01, 2014 | |||
KR | B1 | KR101366154 | May 23, 2012 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PATENT SPECIFICATION | High quality silicon monocrystalline ingot and wafer for semiconductor | Feb 25, 2014 | |||
CN | A | CN104334774 | Apr 02, 2013 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
UNEXAMINED APPLICATION FOR A PATENT FOR INV. | Single crystal silicon ingot and wafer, and apparatus and method for growing said ingot | Feb 04, 2015 | |||
WO | A1 | WO2013176396 | Apr 02, 2013 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
INTERNATIONAL APPLICATION PUBLISHED WITH INTERNATIONAL SEARCH REPORT | 단결정 실리콘 잉곳 및 웨이퍼, 그 잉곳 성장 장치 및 방법 | Nov 28, 2013 | |||
JP | A | JP2015519285 | Apr 02, 2013 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
Published unexamined patent application | 単結晶シリコンインゴット及びウエハ、そのインゴット成長装置及び方法 | Jul 09, 2015 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
LG SILTRON INCORPORATED | 53 IMSU-RO GUMI-SI GYEONGSANGBUK-DO 39386 |
International Classification(s)

- 2013 Application Filing Year
- C30B Class
- 437 Applications Filed
- 395 Patents Issued To-Date
- 90.39 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Cha, Il Seon | Gumi-si, KR | 1 | 4 |
# of filed Patents : 1 Total Citations : 4 | |||
Hong, Young Ho | Gumi-si, KR | 35 | 123 |
# of filed Patents : 35 Total Citations : 123 | |||
Hwang, Jung Ha | Gumi-si, KR | 18 | 97 |
# of filed Patents : 18 Total Citations : 97 |
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Patent Citation Ranking
- 4 Citation Count
- C30B Class
- 18.41 % this patent is cited more than
- 10 Age
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11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 28, 2026 |
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Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
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