SINGLE CRYSTAL SILICON INGOT AND WAFER, AND APPARATUS AND METHOD FOR GROWING SAID INGOT

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United States of America Patent

APP PUB NO 20150147258A1
SERIAL NO

14402405

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Abstract

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The single crystal silicon ingot and wafer of one embodiment has a transition region formed therein which predominantly has crystal defects of 10 nm to 30 nm in size from among crystal defects included in at least one region of a vacancy predominant non-defective region and an interstitial predominant non-defective region.

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Patent Owner(s)

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LG SILTRON INCORPORATED53 IMSU-RO GUMI-SI GYEONGSANGBUK-DO 39386

International Classification(s)

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  • 2013 Application Filing Year
  • C30B Class
  • 437 Applications Filed
  • 395 Patents Issued To-Date
  • 90.39 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances201320142015201620172018201920202021202220230255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cha, Il Seon Gumi-si, KR 1 4
Hong, Young Ho Gumi-si, KR 35 123
Hwang, Jung Ha Gumi-si, KR 18 97

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  • 4 Citation Count
  • C30B Class
  • 18.41 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges58197321153321301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 80100 +0102030405060708090100110120130140150160170180190200210

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