STRUCTURE OF FinFETs
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United States of America Patent
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Issued Date -
May 28, 2015
app pub date -
Apr 30, 2014
filing date -
Nov 25, 2013
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a method for fabricating FinFETs and the structure thereof. The present invention uses an additional mask to define regions forming semiconductor fins having high semiconductor-fin height. By making use of multiple etching processes of the insulating layer, structures with differences in the height of semiconductor fins are achieved. The method can be combined with current process for semiconductor-based FinFETs for overcoming effectively the problem of electron-channel-width quantization effect as well as improving the performance of FinFETs.
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