Method and device for sensing isotropic stress and providing a compensation for the piezo-hall effect
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United States of America Patent
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Jan 2, 2018
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N/A
app pub date -
May 7, 2013
filing date -
May 7, 2012
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Abstract
A method determines isotropic stress by means of a Hall element which includes a plate-shaped area made of a doped semiconductor material and comprises four contacts contacting the plate-shaped area and forming corners of a quadrangle, two neighboring corners of the quadrangle defining an edge thereof. At least one van der Pauw transresistance value in at least one van der Pauw measurement set-up of the Hall element is determined, wherein the four contacts of the Hall element form contact pairs, a contact pair comprising two contacts defining neighboring corners of the quadrangle. One contact pair supplies a current and the other contact pair measures a voltage. A relationship between the supplied current and the measured voltage defines the Van der Pauw transresistance value. The method comprises determining a stress signal which depends on the at least one Van der Pauw transresistance value and determining isotropic stress.

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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
MELEXIS TECHNOLOGIES NV | TRANSPORTSTRAAT 1 POORT WEST-LIMBURG 1371-1372 TESSENDERLO 3980 |
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Huber, Samuel | Jenaz, CH | 13 | 155 |
Raman, Johan | Knesselare, BE | 18 | 103 |
Rombouts, Pieter | Mariakerke, BE | 19 | 104 |
Van, Der Wiel Appolonius Jacobus | Duisburg, BE | 33 | 128 |
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