SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR DBR LAYER
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United States of America Patent
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Issued Date -
May 21, 2015
app pub date -
Nov 19, 2014
filing date -
Nov 21, 2013
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Abstract
A semiconductor device includes a silicon substrate, alight-emitting function layer made of nitride semiconductor, and at least one multilayer film in which two to four lamination pairs are laminated, the lamination pair being a laminated body of a first semiconductor layer made of AlxGa1-xN and a second semiconductor layer made of AlYGa1-YN, the multilayer film being arranged between the silicon substrate and the light-emitting function layer, wherein in the lamination pair that is the closest to the light-emitting function layer in the multilayer film, an Al composition X is equal to or larger than an Al composition Y, in the other lamination pair, the Al composition X is larger than the Al composition Y.
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