FORMING OF A HEAVILY-DOPED SILICON LAYER ON A MORE LIGHTLY-DOPED SILICON SUBSTRATE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20150137133A1
SERIAL NO

14537992

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Calculated Rating
US Family Size
Non-US Coverage

Abstract

See full text

A method of forming a heavily-doped silicon layer on a more lightly-doped silicon substrate including the steps of depositing a heavily-doped amorphous silicon layer; depositing a silicon nitride layer; and heating the amorphous silicon layer to a temperature higher than or equal to the melting temperature of silicon.

First Claim

See full text

Other Claims data not available

Family

PCTEP
+

Patent Owner(s)

Patent OwnerAddress
STMICROELECTRONICS (CROLLES 2) SAS850 RUE JEAN MONNET CROLLES 38920
STMICROELECTRONICS SA29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120

International Classification(s)

loading....
  • 2014 Application Filing Year
  • H01L Class
  • 23828 Applications Filed
  • 21803 Patents Issued To-Date
  • 91.51 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2014201520162017201820192020202120222023202420250255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Marty, Michel Saint Paul D Varces, FR 72 848
Roy, Francois Seyssins, FR 107 538

Cited Art Landscape

Load Citation

Patent Citation Ranking

  • 0 Citation Count
  • H01L Class
  • 0 % this patent is cited more than
  • 10 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1377800619237183722181459473474314501 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500

Forward Cite Landscape

Load Citation