FORMING OF A HEAVILY-DOPED SILICON LAYER ON A MORE LIGHTLY-DOPED SILICON SUBSTRATE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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N/A
Issued Date -
May 21, 2015
app pub date -
Nov 11, 2014
filing date -
Nov 15, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of forming a heavily-doped silicon layer on a more lightly-doped silicon substrate including the steps of depositing a heavily-doped amorphous silicon layer; depositing a silicon nitride layer; and heating the amorphous silicon layer to a temperature higher than or equal to the melting temperature of silicon.
First Claim
all claims..Other Claims data not available
Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
FR | A1 | FR3013506 | Nov 15, 2013 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
APPLICATION FOR PATENT OF INVENTION, (FIRST PUBL.) | FORMATION D'UNE COUCHE DE SILICIUM FORTEMENT DOPEE SUR UN SUBSTRAT DE SILICIUM PLUS FAIBLEMENT DOPE | May 22, 2015 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
STMICROELECTRONICS (CROLLES 2) SAS | 850 RUE JEAN MONNET CROLLES 38920 | |
STMICROELECTRONICS SA | 29 BOULEVARD ROMAIN ROLLAND MONTROUGE 92120 |
International Classification(s)

- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Marty, Michel | Saint Paul D Varces, FR | 72 | 848 |
# of filed Patents : 72 Total Citations : 848 | |||
Roy, Francois | Seyssins, FR | 107 | 538 |
# of filed Patents : 107 Total Citations : 538 |
Cited Art Landscape
- No Cited Art to Display

Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 10 Age
Forward Cite Landscape
- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Nov 21, 2026 |
Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text

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Oct 04, 2016 | I | Issuance | |
Sep 14, 2016 | STCF | INFORMATION ON STATUS: PATENT GRANT | free format text: PATENTED CASE |
Dec 11, 2015 | AS | ASSIGNMENT | free format text: SECURITY INTEREST;ASSIGNOR:THE WHITMORE MANUFACTURING COMPANY;REEL/FRAME:037412/0061 Owner name: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT Effective Date: Dec 11, 2015 |
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May 09, 2013 | P | Published | |
Jan 04, 2013 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ANDERSON, STEVEN;REEL/FRAME:029748/0881 Owner name: THE WHITMORE MANUFACTURING COMPANY, TEXAS Effective Date: Jan 04, 2013 |
Jul 20, 2011 | F | Filing |

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