TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Sep 4, 2014
filing date -
Nov 21, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A transistor structure disposed on a substrate includes a gate electrode, an organic semiconductor layer, a gate insulation layer and a patterned metal layer. The gate insulation layer is disposed between the gate and the organic semiconductor layer. The patterned metal layer has a conductive oxidation surface and is divided into a source electrode and a drain electrode. A portion of the organic semiconductor layer is exposed between the source electrode and the drain electrode. The conductive oxidation surface directly contacts with the organic semiconductor layer.
First Claim
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