MASK FOR FORMING SEMICONDUCTOR LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
May 21, 2015
app pub date -
Nov 14, 2014
filing date -
Nov 19, 2013
priority date (Note) -
Abandoned
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Abstract
A mask for forming a semiconductor layer and a semiconductor device manufactured using the same. The mask for forming a semiconductor layer includes oblique openings. Since a semiconductor layer is formed through one or more openings, it is possible to suppress generation of threading dislocation in a vertical direction from a growth surface of a heterogeneous substrate. The oblique openings are formed by stacking a growth blocking layer on the substrate, followed by dry etching the growth blocking layer, with the substrate disposed in a tilted state.
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