SOLAR CELL CONTAINING N-TYPE DOPED SILICON
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United States of America Patent
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Issued Date -
May 21, 2015
app pub date -
Feb 28, 2013
filing date -
May 11, 2012
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Abstract
A photovoltaic device includes a first semiconducting area having an N-doped silicon base and a second semiconducting area having a P-doped silicon base. The two semiconducting areas are configured to form a PN junction. The first semiconducting area is devoid of boron and includes a concentration of P-type doping impurities that is at least equal to 20% of the concentration of N-type doping impurities.
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