Importance

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Abstract

The invention provides a method for fabricating a transistor and a transistor, wherein the method for fabricating a transistor includes: growing a second oxide layer on the surface of a substrate on which a first oxide layer and a first base region are formed, wherein the second oxide layer is formed above the first base region; forming an emitter region in a first preset area on the second oxide layer; forming a contact hole in a second preset area on the second oxide layer, wherein the second preset area does not overlap with the first preset area; injecting doping elements into the surface of the first base region in the area of the contact hole; and thermally processing the substrate to activate the doping elements to form a second base region. The invention may fabricate the dense base region lithography layer and the contact hole lithography layer in an integrate process ingeniously to thereby perform self-alignment between the dense base region lithography layer and the contact hole lithography layer and address the problem deviation of alignment between the dense base area and the contact hole.

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First Claim