SELECTIVE SIDEWALL GROWTH OF SEMICONDUCTOR MATERIAL
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United States of America Patent
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Issued Date -
May 7, 2015
app pub date -
Jun 7, 2013
filing date -
Jun 8, 2012
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Abstract
A method of producing a bulk semiconductor material comprises the steps of providing a base comprising a substantially planar substrate having a plurality of etched nano/micro-structures located thereon, each structure having an etched, substantially planar sidewall, wherein the plane of each said etched sidewall is arranged at an oblique angle to the substrate, and selectively growing the bulk semiconductor material onto the etched sidewall of each nano/micro-structure using an epitaxial growth process. A layered semiconductor device may be grown onto the bulk semiconductor material.
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