GALLIUM OXIDE SINGLE CRYSTAL AND GALLIUM OXIDE SINGLE CRYSTAL SUBSTRATE
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United States of America Patent
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May 7, 2015
app pub date -
May 8, 2013
filing date -
May 16, 2012
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Provided is a gallium oxide single crystal and a gallium oxide single crystal substrate that can improve the luminous efficiency. In a gallium oxide single crystal 13, the dislocation density is less than or equal to 3.5×106/cm2. The gallium oxide single crystal 13 is manufactured by the EFG method. Further, the seed touch temperature in the EFG method is greater than or equal to 1930 degrees centigrade and less than or equal to 1950 degrees centigrade. A neck part 13a of the gallium oxide single crystal 13 is less than or equal to 0.8 mm. A gallium oxide single crystal substrate 21 is made of the gallium oxide single crystal 13.
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