METHOD OF DEPOSITING THIN FILM
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United States of America Patent
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app pub date -
May 23, 2014
filing date -
Nov 6, 2013
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Abstract
Disclosed is a method of depositing a thin film, which includes supplying a purge gas and a source gas into a plurality of reactors for a first period, stopping supplying of the source gas, and supplying the purge gas and a reaction gas into the plurality of reactors for a second period, and supplying the reaction gas and plasma into the plurality of reactors for a third period.
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