LOGIC GATE AND A CORRESPONDING METHOD OF FUNCTION
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United States of America Patent
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Issued Date -
May 7, 2015
app pub date -
Oct 5, 2012
filing date -
Oct 6, 2011
priority date (Note) -
Abandoned
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Abstract
A logic gate (1) comprising a spintronic memristor device (2), which has two spin-polarized magnetic electrodes (3, 4) for injecting and/or receiving a spin-polarized current and a layer of material (5) interposed between the two electrodes (3, 4) for transporting the spin-polarized current from one electrode to the other. The layer of material (5) is composed of a layer of organic semiconductor that is able to endow the spintronic memristor device (2) with at least two non-volatile electrical resistance states (RH, RL), each of which can be selected by applying a voltage to the electrodes (3, 4) that reaches or exceeds a respective voltage threshold (VT1, VT2) and, in at least a first resistance state (RH) of which, the spintronic memristor device (2) does not present a magnetoresistive effect.
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