Semiconductor Device and Method of Forming Shallow P-N Junction with Sealed Trench Termination
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United States of America Patent
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Issued Date -
May 7, 2015
app pub date -
Nov 7, 2013
filing date -
Nov 7, 2013
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Abandoned
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Abstract
A semiconductor device has a substrate including a semiconductor material of a first conductivity type. A first layer including a semiconductor material of a second conductivity type is formed in the substrate with a boundary between the first layer and the semiconductor material of the first conductivity type as a p-n junction. A vertical trench is formed through the first layer by anisotropic etch and extends at least to the boundary. The vertical trench has a rounded or polygonal shape with a depth less than 40 micrometers. An insulating material is deposited in the vertical trench. An insulating layer is formed over a sidewall of the vertical trench. The shallow vertical trench filled with insulating material increases breakdown voltage and reduces manufacturing time and complexity. The semiconductor device can be a discrete diode, transistor, rectifier, transient voltage suppressor, silicon controlled rectifier, and triode.
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