HIGH-VOLTAGE INSULATED GATE TYPE POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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May 7, 2015
app pub date -
May 29, 2013
filing date -
May 30, 2012
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Abstract
A high-voltage insulated gate type power semiconductor device includes a low-concentration first conductivity type base layer; a plurality of trenches selectively formed with large intervals and narrow intervals provided alternately, in a front surface of the low-concentration first conductivity type base layer; a gate insulating film formed on a surface of each of the plurality of trenches; a gate electrode formed inside the gate insulating film; and a second conductivity type base layer selectively formed between the adjacent trenches sharing the narrow interval. The high-voltage insulated gate type power semiconductor device includes a high-concentration first conductivity type source layer selectively formed on a front surface of the second conductivity type base layer.
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