Chemically Passivated Zinc Oxide Photoelectrode for Photoelectrochemical Water Splitting
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United States of America Patent
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Issued Date -
May 7, 2015
app pub date -
Oct 31, 2014
filing date -
Nov 1, 2013
priority date (Note) -
Abandoned
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Abstract
A chemically passivated photoelectrode, having a conductive substrate, a layer of conductive oxide, preferably zinc oxide (ZnO), over the conductive substrate, and an ultrathin layer of a chemically inert semiconductor material coating the conductive oxide layer, is disclosed. The ultrathin layer of chemically inert semiconductor material, which may be less than 5 nm thick, increases the efficiency of water splitting through passivation of surface charge traps and chemical stability in harsh environments, as opposed to being photoactive. A method of manufacture and a solar cell having the photoelectrode are also disclosed.
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