Memory cell with decoupled read/write path

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United States of America Patent

PATENT NO 9530462
APP PUB NO 20150117081A1
SERIAL NO

14593383

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Abstract

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A memory cell with a decoupled read/write path, the memory cell includes a switch comprising a gate, a first terminal and a second terminal, a resistive switching device connected to the gate of the switch, and a conductive path between the gate of the switch and the second terminal.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN ROAD 6 HSINCHU SCIENCE PARK HSINCHU 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Kuo-Ching Hsin-Chu, TW 139 671
Ting, Yu-Wei Hsin-Chu, TW 77 369
Tsai, Chun-Yang Hsin-Chu, TW 44 365

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