PHOSPHORUS AND ARSENIC DOPING OF SEMICONDUCTOR MATERIALS
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United States of America Patent
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Issued Date -
Apr 23, 2015
app pub date -
Oct 21, 2014
filing date -
Oct 21, 2013
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Abandoned
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Abstract
Provided are methods for preparing a doped silicon material. The methods include contacting a surface of a silicon material with a dopant solution comprising a dopant-containing compound selected from a phosphorus-containing compound and an arsenic-containing compound, to form a layer of dopant material on the surface; and diffusing the dopant into the silicon material, thereby forming the doped silicon material, wherein the doped silicon material has a sheet resistance (Rs) of less than or equal to 2,000 Ω/sq.
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