MASK BLANK AND METHOD OF MANUFACTURING A TRANSFER MASK
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United States of America Patent
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Issued Date -
Apr 23, 2015
app pub date -
Feb 7, 2013
filing date -
Mar 14, 2012
priority date (Note) -
Abandoned
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Abstract
Provided is a mask blank having a structure including a thin film on a substrate, wherein the thin film is made of a material containing one or more elements selected from tantalum, tungsten, zirconium, hafnium, vanadium, niobium, nickel, titanium, palladium, molybdenum, and silicon, and wherein the normalized secondary ion intensity of at least one or more ions selected from a calcium fluoride ion, a magnesium fluoride ion, an aluminum fluoride ion, a calcium chloride ion, and a magnesium chloride ion is 2.0×10−4 or less when a surface of the thin film is measured by time-of-flight secondary ion mass spectrometry (TOF-SIMS) under measurement conditions of a primary ion species of Bi3++, a primary accelerating voltage of 30 kV, and a primary ion current of 3.0 nA.
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