COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) INVERTER CIRCUIT DEVICE
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United States of America Patent
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Issued Date -
Apr 23, 2015
app pub date -
Aug 13, 2014
filing date -
Oct 18, 2013
priority date (Note) -
Abandoned
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Abstract
There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.
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