FABRICATION METHOD OF SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 23, 2015
app pub date -
Sep 12, 2014
filing date -
Oct 17, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A fabrication method of a semiconductor device includes forming a mask insulating film having a specified thickness on the top surface of an n-type semiconductor substrate, forming an opening at a specified position in the mask insulating film, carrying out ion implantation with p-type impurity ions onto the top surface, removing a layer portion formed in the mask insulating film with the p-type impurities included by the ion implantation, and carrying out heat treatment to diffuse the p-type impurities implanted into the n-type semiconductor substrate from the opening to a depth, thereby forming the p-type isolation region.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully