MULTILAYER TRANSITION METAL DICHALCOGENIDE DEVICE, AND SEMICONDUCTOR DEVICE USING SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 23, 2015
app pub date -
Mar 20, 2013
filing date -
May 23, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention relates to a multilayer transition metal dichalcogenide device and a semiconductor device using the same, wherein the invention, preferably comprising three or more layers, is formed with a conventional single-layered transition metal chalcogenide, thereby enabling absorption of the light over a wide wavelength range from ultraviolet rays to near infrared rays. To this end, disclosed is a transition metal dichalcogenide formed to allow absorption of the light over a relatively wider wavelength range compared with a single-layered transition metal chalcogenide, and a transition metal dichalcogenide device having a semiconductor channel formed by a transition metal dichalcogenide.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully