METHOD AND COMPOSITION FOR SELECTIVELY REMOVING METAL HARDMASK AND OTHER RESIDUES FROM SEMICONDUCTOR DEVICE SUBSTRATES COMPRISING LOW-K DIELECTRIC MATERIAL AND COPPER
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United States of America Patent
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Issued Date -
Apr 16, 2015
app pub date -
Dec 11, 2013
filing date -
Oct 11, 2013
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Abstract
An aqueous removal composition having a pH in the range of from 2 to 14 and method for selectively removing an etching mask consisting essentially of TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W relative to low-k materials from a semiconductor substrate comprising said low-k materials having a TiN, TaN, TiNxOy, TiW, W, or alloy of Ti or W etching mask thereon wherein the removal composition comprises at least one oxidizing agent and a carboxylate compound.
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