FAST ATOMIC LAYER DEPOSITION PROCESS USING SEED PRECURSOR
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United States of America Patent
Stats
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N/A
Issued Date -
N/A
app pub date -
Oct 14, 2014
filing date -
Oct 15, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Embodiments relate to an atomic layer deposition (ALD) process that uses a seed precursor for increased deposition rate. A first reactant precursor (e.g., H2O) may be formed as a result of reaction. The first reactant precursor may react with or substitute source precursor (e.g., 3DMAS) in a subsequent process to deposit material on a substrate. In addition, a second reactant precursor (e.g., radicals) may be separately injected onto the substrate previously injected with the source precursor. By causing the source precursor to react with the first reactant precursor from the surface of the substrate and also react with the second reactant provided by the injector, the material is deposited on the substrate in an expedient manner.
First Claim
Other Claims data not available