SEMICONDUCTOR DEVICE INCLUDING STRESS LAYER ADJACENT CHANNEL AND RELATED METHODS
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United States of America Patent
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Issued Date -
Apr 16, 2015
app pub date -
Oct 10, 2013
filing date -
Oct 10, 2013
priority date (Note) -
Abandoned
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Abstract
A method for making a semiconductor device may include forming a gate on a semiconductor layer, forming sidewall spacers adjacent the gate, and forming raised source and drain regions defining a channel in the semiconductor layer under the gate. The raised source and drain regions may be spaced apart from the gate by the sidewall spacers. The method may further include removing the sidewall spacers to expose the semiconductor layer between the raised source and drain regions and the gate, and forming a stress layer overlying the gate and the raised source and drain regions. The stress layer may contact the semiconductor layer between the raised source and drain regions and the gate.
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