ACTIVE DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Apr 16, 2015
app pub date -
Mar 14, 2014
filing date -
Oct 11, 2013
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
An active device includes a gate, a gate insulation layer, a channel layer, a first passivation layer, a second passivation layer, a source and a drain. The gate insulation layer is disposed on the substrate and covers the gate. The channel layer is disposed on the gate insulation layer and has a semiconductor section disposed corresponding to the gate and a conductive section located around the semiconductor section. The first passivation layer is disposed on the channel layer and covers the semiconductor section. The second passivation layer is disposed on and covers the first passivation layer. The source and the drain are disposed on the gate insulation layer, and extended along peripheries of the conductive section, the first and the second passivation layers to be disposed on the second passivation layer. A portion of the second passivation layer is exposed between the source and the drain.
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