PLASMA ETCHING APPARATUS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Apr 16, 2015
app pub date -
May 23, 2014
filing date -
Mar 14, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A plasma etching apparatus includes first, second and third chambers, and a plasma generation device. An inner cross-sectional area and shape of the second chamber interior substantially corresponds to the upper surface of a substrate, and a substrate support is disposed so that, in use, the substrate is substantially in register with the interior of the second chamber, and the upper surface of the substrate is positioned at a distance of 80 mm or less from the interface between the second and third chambers.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully