INDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
Stats
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N/A
Issued Date -
Apr 9, 2015
app pub date -
Sep 11, 2014
filing date -
Oct 7, 2013
priority date (Note) -
Published
status (Latency Note)
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Abstract
An inductor structure includes a substrate, a protection layer, a patterned first conductive layer, copper bumps, a passivation layer, a diffusion barrier layer, and an oxidation barrier layer. The protection layer is located on the substrate. The bond pads of the substrate are respectively exposed through protection layer openings. The first conductive layer is located on the surfaces of the bond pads and the protection layer adjacent to the protection layer openings. The copper bumps are located on the first conductive layer. The passivation layer is located on the protection layer and the copper bumps. At least one of the copper bumps is exposed through a passivation layer opening. The diffusion barrier layer is located on the copper bump that is exposed through the passivation layer opening. The oxidation barrier layer is located on the diffusion barrier layer.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
XINTEC INC | TAOYUAN CITY |
International Classification(s)

- 2014 Application Filing Year
- H01L Class
- 23828 Applications Filed
- 21803 Patents Issued To-Date
- 91.51 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
HU, Yu-Wen | Zhongli City, TW | 8 | 8 |
# of filed Patents : 8 Total Citations : 8 | |||
LAI, Wei-Ming | Taoyuan City, TW | 11 | 8 |
# of filed Patents : 11 Total Citations : 8 |
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 10 Age
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