PREFERRED VOLUMETRIC ENLARGEMENT OF III-NITRIDE CRYSTALS
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Apr 9, 2015
app pub date -
Oct 8, 2014
filing date -
Oct 8, 2013
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The present disclosure generally relates to systems and methods for growing and preferentially volumetrically enhancing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. The systems and methods further include using thermal gradients and/or chemical driving agents to enhance or limit crystal growth in one or more planes.
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