METHODS FOR DEPOSITING AN ALUMINUM OXIDE LAYER OVER GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS
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United States of America Patent
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Issued Date -
Apr 2, 2015
app pub date -
Oct 2, 2013
filing date -
Oct 2, 2013
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Abandoned
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Abstract
Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon and exposing the semiconductor substrate to first and second atomic layer deposition (ALD) processes. The first ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a first oxygen-containing precursor. The second ALD process includes exposing the semiconductor substrate to a first gaseous precursor comprising aluminum and exposing the semiconductor substrate to a second gaseous precursor comprising a second oxygen-containing precursor.
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