METHODS FOR REMOVING A NATIVE OXIDE LAYER FROM GERMANIUM SUSBTRATES IN THE FABRICATION OF INTEGRATED CIRCUITS
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United States of America Patent
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Issued Date -
Apr 2, 2015
app pub date -
Oct 2, 2013
filing date -
Oct 2, 2013
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Abandoned
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Abstract
Methods for fabricating integrated circuits are provided in various exemplary embodiments. In one embodiment, a method for fabricating an integrated circuit includes providing a germanium-based semiconductor substrate comprising a GeOx layer formed thereon having a first thickness, removing a portion of the GeOx layer by exposing the semiconductor substrate to a hydrogen-plasma dry etch so as to reduce the first thickness of the GeOx layer to a second thickness, and depositing a high-k material over the GeOx layer of the semiconductor substrate.
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