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Abstract

An SOI substrate includes first and second active regions separated by STI structures and including gate stacks. A spacer layer conformally deposited over the first and second regions including the gate stacks is directionally etched to define sidewall spacers along the sides of the gate stacks. An oxide layer and nitride layer are then deposited. Using a mask, the nitride layer over the first active region is removed, and the mask and oxide layer are removed to expose the SOI substrate in the first active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the first active region and a protective nitride layer is deposited. The masking, nitride layer removal, and oxide layer removal steps are then repeated to expose the SOI in the second active region. Raised source-drain structures are then epitaxially grown adjacent the gate stacks in the second active region.

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First Claim