AIR-SPACER MOS TRANSISTOR
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United States of America Patent
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Issued Date -
Apr 2, 2015
app pub date -
Sep 29, 2014
filing date -
Sep 30, 2013
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Abstract
A MOS transistor has a gate insulator layer that is made of a material of high dielectric constant deposited on a substrate. The gate insulator layer extends, with a constant thickness, under and beyond a gate stack. Spacers of low dielectric constant are formed on either side of the gate stack and vertically separated from the substrate by the extension of the gate insulator layer beyond the sides of the gate stack. The spacers of low dielectric constant are preferably air spacers.
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