Method of fabricating a non-volatile memory
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United States of America Patent
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Issued Date -
Apr 2, 2015
app pub date -
Jun 30, 2014
filing date -
Sep 27, 2013
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Abandoned
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Abstract
A structure of a memory cell includes a substrate, a well, two source/drain doped regions, a stacked layer and a metal gate. The stacked layer includes a tunneling layer, and a charge trapping layer. A method of fabricating the memory cell may vary with the change in sequence of performing steps. The difference in sequence of fabrication may yield different characteristic variations for the formed components of the memory cell.
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