Method of Manufacturing Semiconductor Device and the Semiconductor Device
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United States of America Patent
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Issued Date -
Apr 2, 2015
app pub date -
Sep 25, 2014
filing date -
Sep 30, 2013
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Abandoned
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Abstract
A method of manufacturing a semiconductor device includes: forming a gate electrode material layer made of a material configuring a gate electrode and a barrier material layer made of a silicon nitride film; forming an upper barrier layer configured to an upper surface of the gate electrode with the barrier material layer and forming the gate electrode from the gate electrode material later by etching the barrier material layer and the gate electrode material layer with a same mask pattern; forming a sidewall barrier layer configured to cover a side surface of the gate electrode by forming again the barrier material layer after the forming of the gate electrode; forming an interlayer insulation layer configured to cover a surface-side of the semiconductor substrate including the upper surface barrier layer and the sidewall barrier layer; and opening the interlayer insulation layer and forming the silicide electrode.
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