Technique for controlling temperature uniformity in crystal growth apparatus
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Apr 28, 2020
Grant Date -
Apr 2, 2015
app pub date -
Sep 17, 2014
filing date -
Sep 30, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A sapphire crystal growth apparatus is provided that includes a chamber, a hot zone and a muffle. More specifically, the hot zone is disposed within the chamber and includes at least one heating system, at least one heat removal system, and a crucible containing feedstock. Additionally, a muffle that surrounds at least two sides of the crucible is also provided to ensure uniform temperature distribution through the feedstock during crystal growth to allow the crystalline material to be grown with a square or rectangular shaped cross section.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully