METHOD FOR MANUFACTURING LIGHT EMITTING DIODE
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United States of America Patent
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Issued Date -
Mar 26, 2015
app pub date -
Sep 10, 2014
filing date -
Sep 25, 2013
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Abandoned
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Abstract
A method for manufacturing a light emitting diode includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a transitional layer on the buffer layer, the buffer layer being made of InGaN; forming an epitaxial layer on the transitional layer; activating the transitional layer by a way of radiating the transitional layer using laser; and when radiated with a laser, the transitional layer separates from the epitaxial layer.
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